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74 FR 56374, Oct. 30, 2009, unless otherwise noted.
75 FR 74818, Dec. 1, 2010, unless otherwise noted.
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At 90 FR 21227, May 19, 2025, as required by the Congressional Review Act and Public Law 119-2, the Environmental Protection Agency removed the amendments to §§ 98.3 and 98.4 made effective on Jan. 17, 2025, at 89 FR 91163, Nov. 18, 2024. As of May 19, 2025, §§ 98.3 and 98.4 reverted to the Jan. 16, 2025 version.
(a) The electronics manufacturing source category consists of any of the production processes listed in paragraphs (a)(1) through (a)(5) of this section that use fluorinated GHGs or N2O. Facilities that may use these processes include, but are not limited to, facilities that manufacture micro-electro-mechanical systems (MEMS), liquid crystal displays (LCDs), photovoltaic cells (PV), and semiconductors (including light-emitting diodes (LEDs)).
(1) Any electronics production process in which the etching process uses plasma-generated fluorine atoms and other reactive fluorine-containing fragments, that chemically react with exposed thin-films (e.g., dielectric, metals) or substrate (e.g., silicon) to selectively remove portions of material.
(2) Any electronics production process in which chambers used for depositing thin films are cleaned periodically using plasma-generated fluorine atoms and other reactive fluorine-containing fragments.
(3) Any electronics production process in which wafers are cleaned using plasma generated fluorine atoms or other reactive fluorine-containing fragments to remove residual material from wafer surfaces, including the wafer edge.
(4) Any electronics production process in which the chemical vapor deposition (CVD) process or other manufacturing processes use N2O.
(5) Any electronics manufacturing production process in which fluorinated heat transfer fluids are used to cool process equipment, to control temperature during device testing, to clean substrate surfaces and other parts, and for soldering (e.g., vapor phase reflow).
[75 FR 74818, Dec. 1, 2010, as amended at 77 FR 10380, Feb. 22, 2012]